Description: AE's Inductively Coupled Plasma (ICP) Source generates a high-density plasma for the remote delivery of activate species. The compact unit easily adapts to either new or existing vacuum systems. The primary benefits of the ICP source include enhanced rate deposition and improved film stoichiometry. Another advantage is reduced target arcing in reactive sputtering applications.
The ICP source is designed primarily for applications where a remote source of atomic oqygen or reactive nitrogen is desired. This versatile source gives process engineers greater flexibility and control at a number of critical points in the process stream.
This system has the following applications:
Surface Modifications
Improved adhesion of films to metal surfaces
Modified surface wetability
Enhanced surface oxidation
Exhaust Gas abatement
Chamber of Foreline cleaning material removal
Enhanced cleaning of critical parts
Increased etching and ashing rates of organic material
This system has the following features:
Compat design/small footprint
Engineered for industrial use
AE internal fixed match
Fully interlocked
Electrodeless design
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